Latest offerings from the Polyfet Team!
For a complete list of our LDMOS transistor offering,				ldmos shortform
For a complete list of our VDMOS transistor offering,				vdmos shortform
For a complete list of our GaN transistor offering,				Gan shortform
Sample and production quantities are now available for the following devices:-
Transistors New Product LDMOS High Power High Efficiciency Transistors
Part No	Pout W	Freq Mhz	Gain dB	theta jc	gm mho	Idsat  A	Ciss pf	Crss pf	Coss pf	Style	Pkg
LA2541	200	500	16	0.38	7.5	21	122	2	45	Push - Pull	LA
LS2541	200	500	16	0.38	7.5	21	122	2	45	Push - Pull	LS
LS2641	250	500	16	0.35	7.8	29	147	1.6	60	Push - Pull	LS
LK2201	50	1000	17	1.2	2.8	7.5	40	0.8	15.2	Push - Pull	AK
LQ2001	20	1000	19	1.5	1	2.8	17	0.3	6	Push - Pull	AQ
GP3441	50	2500	11	3.6	0	8.5	10	0.45	6	Single Ended	GP
Modules
Part Number	Frequency  Min Mhz	Frequency Max Mhz	Min. Gain   dB	Power Output	VDD
MCCQ04	20	520	27	15	24
MTDQ01	20	520	13	50	24
Application Notes
Demo Amp	Frequency Mhz	Min. Gain dB	Power Output Watts	Transistors	# of Stages	Description
TB256	20-3000	10	5	GP2001	1	Ultra Broadband, surface-mount
TB257	20-2500	10	10	G22001	1	Ultra Broadband, surface-mount
TB259	20-2000	13	10	G22001	1	Hand Held VHF_UHF Radio
TB260	136-870	16	7	G21001	1	Broadband, 48V GaN
TB261	225-2500	14	5	GP1441	1	Low Power broadband, 48V GaN
TB262	1000-2500	13	50	GP3441	1	Medium Power broadband, 48V GaN
Please call your local Representative or the factory for additional information.
We manufacture our products in a World Class Wafer Facility. Advanced techniques of dry etching and mask steppers are used to improve uniformity of the transistor from production batch to production batch. Sub-micron process technology is used to achieve high performance. The transistors are manufactured by ion implant diffusion techniques.
Polyfet continues to make product improvements in both her Vdmos, Ldmos and GaN transistor lines. The higher input impedance of the Vdmos makes input matching simpler, especially for broadband frequencies. The lower gain of the Vdmos facilitates simpler stabilizing circuitry at lower frequencies. The low parasitic capacitances of the Ldmos makes it suitable for high frequency operations at high efficiencies. GaN affords very high input and output impedances, faciliting extrememly simple matching networks for broadband. GaN transistors have high RF power out to output capactianceratio; thus very high efficiencies can be acheived.
Important Notice
We have renamed our Ldmos transistors with a New Product Numbering System. You can look up a cross reference and learn about this improved product I.D. system.