1971-1976
SK Leong is Engineering Manager at Intel; sets up Fab 2 at growing Intel which produced Intel's bipolar & CMOS products.
About
About
Based and operated entirely out of Southern California for over 40 years, we design and manufacture high-performance RF power transistors and RF amplifier modules with a focus on exceptional customer service.
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Our experienced engineering team supports your project every step of the way—from initial concept through high-volume production. We offer evaluation amplifiers, expert design input, and fast, reliable technical support to keep your development moving forward.
Our long product life cycles reflect a deep commitment to lasting partnerships. When you work with us, you gain a reliable supplier whose components help keep your products in production for decades.
Polyfet RF Devices Timeline
1976
SK Leong starts and operates a wafer fab called Polycore Electronics
1984
SK Leong founds Polycore RF
1985
Polycore RF develops and releases F series - world’s first gold metalized 1 GHz VDMOS RF transistors
1989
SK Leong renames Polycore RF to Polyfet RF Devices (“Polyfet” = Polysilicon field-effect transistor)
1996
Polyfet introduces its first LDMOS RF transistors
1997
S series VDMOS transistors released
1999
Polyfet releases its first RF power module PCM001
2010
Polyfet introduces its line of GaN RF transistors
2012
Polyfet releases second gen LDMOS transistors with higher performance
2016
Polyfet deepens its commitment to quality by obtaining ISO9001 certification
2023
Polyfet releases 2kW LDMOS transistor