The GP2001 is one of several 28VDC GaN transistors manufactured by Polyfet RF Devices. It is an unmatched, discrete transistor that is suitable for applications from 1MHz up to 3.0GHz. This transistor uses GaN on SiC technology and a eutectic die attach method to mount to a thermally enhanced package making it ideal for CW applications.

Pictured is the TB256, an evaluation pallet amplifier developed to demonstrate the GP2001 putting out typical 10W P1dB CW across 20-3000MHz with 10dB gain, and 35% efficiency while operating off of 28VDC.

The data sheet for the GP2001 is in the “Products” section of our web site, and the data package for the TB256 is in the “Design” section of our web site. Please visit us at IMS 2025 booth # 1937.www.polyfet.com